Features of changes in optical response within the surface oxide layer in Si and GaAs

Makarenko, O. V.; Zavalistyi, O. I.; Yampolskiy, A. L.; Poperenko, L. V.

doi:10.17721/1812-5409.2018/3.15

Features of changes in optical response within the surface oxide layer in Si and GaAs

Тип публікації :

Стаття

Дата випуску :

2018

Автор(и) :

Makarenko, O. V.

Zavalistyi, O. I.

Yampolskiy, A. L.

Poperenko, L. V.

Мова основного тексту :

Англійська

eKNUTSHIR URL :

https://ir.library.knu.ua/handle/15071834/26338

DOI :

10.17721/1812-5409.2018/3.15

Журнал :

Bulletin of Taras Shevchenko National University of Kyiv. Physics and Mathematics

Випуск :

3

ISSN :

1812-5409

Початкова сторінка :

99

Кінцева сторінка :

104

Цитування :

[APA 7] Makarenko, O. V., Zavalistyi, O. I., Yampolskiy, A. L., & Poperenko, L. V. (2018). Features of changes in optical response within the surface oxide layer in Si and GaAs. Bulletin of Taras Shevchenko National University of Kyiv. Physics and Mathematics, (3), 99–104. https://doi.org/10.17721/1812-5409.2018/3.15

[ДСТУ] Features of changes in optical response within the surface oxide layer in Si and GaAs / O. V. Makarenko et al. Bulletin of Taras Shevchenko National University of Kyiv. Physics and Mathematics. 2018. no. 3. P. 99—104. DOI: 10.17721/1812-5409.2018/3.15 (date of access: 18.07.2026).

In this paper, the angular ellipsometric studies of natural oxidized surface layer on silicon and gallium arsenide are carried out. The mean wavelength of probe radiation beam was ? = 625 nm, with FWHM = 10 nm. Angular dependencies of ellipsometric parameters ? and ? (azimuth of restored linear polarization and phase shift between p- and s- components of reflected radiation) were recorded. The combined approach for their analysis, which consists in sectioning the investigated medium near-surface area into 500 ultrathin layers interconnected by the dielectric permittivity function and determining the ellipsometric parameters of the medium by applying matrix methods for calculating the amplitudes and phases of the reflected waves from such a system in two polarizations, was used. The depth of the optical response profile was determined by the method of differential evolution by varying optical constants in accordance with the chosen theoretical model to achieve a minimum deviation (MSE, Mean Squared Error) between the calculated and measured ellipsometric parameters. Optical response profiles corresponding to the models of half-infinite medium, a homogeneous layer, as well as the linear and exponential profiles are analyzed.Key words: ellipsometry, multilayer model, oxide layer, silicon, gallium arsenide.Pages of the article in the issue: 99 - 104Language of the article: Ukrainian

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Формат :

Adobe PDF

Розмір :

1.14 MB

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(MD5):5d0005bb6c5545712d5a4d92e4706924

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