Light-activated photoluminescence of porous silicon
Тип публікації :
Тези конференції
Дата випуску :
20 квітня 1998 р.
Автор(и) :
Boltovec, Mykola S.
Naumenko, Svitlana M.
Ostapchuk, Tetjana V.
Rudenko, Olga V.
Науковий(і) керівник(и)/редактор(и) :
Sergey V. Svechnikov
Mikhail Y. Valakh
Мова основного тексту :
Англійська
eKNUTSHIR URL :
DOI :
Конференція/Видання :
Optical Diagnosis of Materials and Devices for Opto-, Micro-, and Quantum Elec-tronics 1997
Том :
3359
ISSN :
0277-786X
Початкова сторінка :
227
Кінцева сторінка :
231
Цитування :
[APA 7] Boltovec, M. S., Даценко, О. І., Naumenko, S. M., Ostapchuk, T. V., & Rudenko, O. V. (1998). Light-activated photoluminescence of porous silicon. In V. S. Sergey, & Y. V. Mikhail (Eds.), Optical Diagnosis of Materials and Devices for Opto-, Micro-, and Quantum Elec-tronics 1997 (pp. 227–231). https://doi.org/10.1117/12.306217
[ДСТУ] Light-activated photoluminescence of porous silicon / M. S. Boltovec et al. Optical Diagnosis of Materials and Devices for Opto-, Micro-, and Quantum Elec-tronics 1997 : матеріали конф. / за ред. V. S. Sergey, Y. V. Mikhail. Kyiv : SPIE, 1998. P. 227—231. DOI: 10.1117/12.306217 (date of access: 25.07.2026).
Samples ofporous silicon (PS) were etched in concentrated hydrofluonc acid. The initial and etched samples were exposed to the air by pairs at room temperature either in the dark or in daylight. In the process of exposition the integrated intensity of photoluminescence (IPL) excited by a nitrogen laser (337 nm) was measured in regular time intervals on all samples. It has been established that when samples are exposed to the light their 'PL rises with lime, increasing more rapidly in the etched samples than in the nonetched ones. 'PL of the etched samples flattened out after several weeks, while that of the nonetched ones — after several months. 'PL ofthe samples that were in the dark practically did not change with time. It is shown that the rate of 'PL nse depends on a degree of ionization of the air where the samples were located. The results obtained confirm the idea that one ofthe main factors limiting the quantum yield of PS photolurninescence is the nonradiative recombmation that results from the presence ofdangling bonds which may be saturated by the light-generated air ions.
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Галузі знань та спеціальності :
10 Природничі науки::104 Фізика та астрономія
Галузі науки і техніки (FOS) :
Фізичні науки
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