Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
Тип публікації :
Стаття
Дата випуску :
5 травня 2017 р.
Автор(и) :
Golovynskyi, Sergii
Institute of Semiconductor Physics, Shenzhen University, Taras Shavchenko Kyiv National University, Taras Shevchenko National University of Kyiv
Seravalli, Luca
CNR-IMEM Institute, Universita degli Studi di Parma Dipartimento di Fisica e Scienze della Terra Macedonio Melloni, University of Dublin Trinity College
Datsenko, Oleksandr
Trevisi, Giovanna
Institute of Materials for Electronics and Magnetism
Frigeri, Paola
National Research Council - Italy, CNR - IMEM, Universita degli Studi di Parma Dipartimento di Fisica e Scienze della Terra Macedonio Melloni
Enos Gombia
Golovynska, Iuliia
Shenzhen University
Qu, Junle
Ohulchanskyy, Tymish
Shenzhen University, Taras Shevchenko National University of Kyiv, University at Buffalo
Мова основного тексту :
Англійська
eKNUTSHIR URL :
Журнал :
Nanoscale Research Letters
Том :
12
Випуск :
1
ISSN :
1931-7573
Початкова сторінка :
335
Цитування :
[APA 7] Golovynskyi, S., Seravalli, L., Datsenko, O., Trevisi, G., Frigeri, P., Enos, G., Golovynska, I., Кондратенко, С. В., Qu, J., & Ohulchanskyy, T. (2017). Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures. Nanoscale Research Letters, 12(1), 335. https://doi.org/10.1186/s11671-017-2091-z
[ДСТУ] Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures / S. Golovynskyi et al. Nanoscale Research Letters. 2017. Vol. 12, no. 1. P. 335. DOI: 10.1186/s11671-017-2091-z (date of access: 25.07.2026).
Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different electrical contact configurations that allowed us to have the current flow (i) only through QDs and embedding layers and (ii) through all the structure, including the GaAs substrate (wafer). Different optical transitions between states of QDs, wetting layers, GaAs or InGaAs buffers, and defect-related centers were studied by means of photovoltage (PV), photoconductivity (PC), photoluminescence (PL), and absorption spectroscopies. It was shown that the use of the InGaAs buffer spectrally shifted the maximum of the QD PL band to 1.3 μm (telecommunication range) without a decrease in the yield. Photosensitivity for the metamorphic QDs was found to be higher than that in GaAs buffer while the photoresponses for both metamorphic and pseudomorphic buffer layers were similar. The mechanisms of PV and PC were discussed for both structures. The dissimilarities in properties of the studied structures are explained in terms of the different design. A critical influence of the defects on the photoelectrical properties of both structures was observed in the spectral range from 0.68 to 1. 0 eV for contact configuration (ii), i.e., in the case of electrically active GaAs wafer. No effect of such defects on the photoelectric spectra was found for configuration (i), when the structures were contacted to the top and bottom buffers; only a 0.83 eV feature was observed in the photocurrent spectrum of pseudomorphic structure and interpreted to be related to defects close to InAs/GaAs QDs.
Галузі знань та спеціальності :
10 Природничі науки::104 Фізика та астрономія
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