Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening
Тип публікації :
Стаття
Дата випуску :
3 травня 2019 р.
Автор(и) :
Golovynskyi, Sergii
Institute of Semiconductor Physics, Shenzhen University, Taras Shavchenko Kyiv National University, Taras Shevchenko National University of Kyiv
Datsenko, Oleksandr
Seravalli, Luca
CNR-IMEM Institute, Universita degli Studi di Parma Dipartimento di Fisica e Scienze della Terra Macedonio Melloni, University of Dublin Trinity College
Trevisi, Giovanna
Institute of Materials for Electronics and Magnetism
Frigeri, Paola
National Research Council - Italy, CNR - IMEM, Universita degli Studi di Parma Dipartimento di Fisica e Scienze della Terra Macedonio Melloni
Babichuk, Ivan
Golovynska, Iuliia
Shenzhen University
Li, Baikui
Hong Kong University of Science and Technology, Shenzhen University, University of Science and Technology of China
Qu, Junle
Мова основного тексту :
Англійська
eKNUTSHIR URL :
Журнал :
Nanotechnology
Випуск :
30
ISSN :
0957-4484
Початкова сторінка :
305701
Цитування :
[APA 7] Golovynskyi, S., Datsenko, O., Seravalli, L., Trevisi, G., Frigeri, P., Babichuk, I., Golovynska, I., Li, B., & Qu, J. (2019). Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening. Nanotechnology, (30), 305701. https://doi.org/10.1088/1361-6528/ab1866
[ДСТУ] Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening / S. Golovynskyi et al. Nanotechnology. 2019. no. 30. P. 305701. DOI: 10.1088/1361-6528/ab1866 (date of access: 18.07.2026).
Metamorphic InAs/In0.15Ga0.85As and InAs/In0.31Ga0.69As quantum dot (QD) arrays are known to be photosensitive in the telecommunication ranges at 1.3 and 1.55 μm, respectively; however, for photonic applications of these nanostructures, the effect of levels related to defects still needs in-depth investigation. We have focused on the influence of electron traps of defects on photocurrent (PC) in the plane of the QD array, studying by PC and deep level thermally stimulated current spectroscopy together with HRTEM and theoretical modeling. In the structures, a rich spectrum of electron trap levels of point defects EL6 (Ec − 0.37 eV), EL7 (0.29–0.30 eV), EL8 (0.27 eV), EL9/M2 (0.22–0.23 eV), EL10/M1 (0.16 eV), M0 (∼0.11 eV) and three extended defects ED1/EL3 (0.52–0.54), ED2/EL4 (0.47–0.48 eV), ED3/EL5 (0.42–0.43 eV) has been identified. Among them, new defect levels undiscovered earlier in InAs/InGaAs nanostructures has been detected, in particular, EL8 and M0. The found electron traps are shown to affect a time-dependent PC at low temperatures. Besides a long-term kinetics due to trap charging, a prolonged PC decrement versus time is measured under constant illumination. The decrement is interpreted to be related to a Coulomb screening of the conductivity channel by the electrons captured in the QD interface traps. The decrement is well fitted by allometric exponents, which means many types of traps involved in electron capturing. This study provides new findings into the mechanism of in-plane PC of QD arrays, showing a crucial importance of growth-related defects on photoresponsivity at low temperatures.
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Галузі знань та спеціальності :
10 Природничі науки::104 Фізика та астрономія
Галузі науки і техніки (FOS) :
Оптика
Фізика конденсованих систем
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