Near-infrared lateral photoresponse in InGaAs/GaAs quantum dots
Тип публікації :
Стаття
Дата випуску :
7 квітня 2020 р.
Автор(и) :
Golovynskyi, Sergii
Institute of Semiconductor Physics, Shenzhen University, Taras Shavchenko Kyiv National University, Taras Shevchenko National University of Kyiv
Datsenko, Oleksandr
Seravalli, Luca
CNR-IMEM Institute, Universita degli Studi di Parma Dipartimento di Fisica e Scienze della Terra Macedonio Melloni, University of Dublin Trinity College
Trevisi, Giovanna
Institute of Materials for Electronics and Magnetism
Frigeri, Paola
National Research Council - Italy, CNR - IMEM, Universita degli Studi di Parma Dipartimento di Fisica e Scienze della Terra Macedonio Melloni
Enos Gombia
Babichuk, Ivan
Danying Lin
Li, Baikui
Hong Kong University of Science and Technology, Shenzhen University, University of Science and Technology of China
Qu, Junle
Мова основного тексту :
Англійська
eKNUTSHIR URL :
Журнал :
Semiconductor Science and Technology
Том :
35
Випуск :
5
ISSN :
0268-1242
Початкова сторінка :
055029
Цитування :
[APA 7] Golovynskyi, S., Datsenko, O., Seravalli, L., Trevisi, G., Frigeri, P., Enos, G., Babichuk, I., Danying, L., Li, B., & Qu, J. (2020). Near-infrared lateral photoresponse in InGaAs/GaAs quantum dots. Semiconductor Science and Technology, 35(5), 055029. https://doi.org/10.1088/1361-6641/ab7774
[ДСТУ] Near-infrared lateral photoresponse in InGaAs/GaAs quantum dots / S. Golovynskyi et al. Semiconductor Science and Technology. 2020. Vol. 35, no. 5. P. 055029. DOI: 10.1088/1361-6641/ab7774 (date of access: 25.07.2026).
Infrared photodetectors with In(Ga)As quantum dot (QD) active element functioning on interband and intersubband transitions are currently actively investigated, however, the vertical sensors were mostly reported. In the current study, a multilayer In0.4Ga0.6As/GaAs QD photodetector structure allowing the lateral photocurrent detection at normal incidence has been prepared depositing top contact. In order to have a comparison, a heterostructure with only a stack of In0.4Ga0.6As/GaAs wetting layers (WL) has been grown. In-depth photoelectrical characterization shows an effective broad-band photodetection related to the interband transitions between quantum-confined levels in QDs ranging from 1.03 to 1.38 eV (0.9–1.2 μm) that covers much wider infrared range in comparison to that from WLs (1.27–1.38 eV). Photoluminescence spectroscopy confirms the existence of QD transitions, observed as intense QD emission which peaked at 1.12 eV (∼1 μm) redshifted in comparison to the WL structure. The mechanisms of photoconductivity are modelled and discussed, comparing both the structures. We also show that our QD stack has an order lower contribution from defects compared to similar QD structures investigated before. At the same time, our structures demonstrate appropriate device characteristics at room temperature, such as the wide dynamic range from 10–2 to 103 μWcm−2 and a high photoresponsivity up to 20 AW−1 at low excitation intensities over 10–2–10–1 μWcm−2, while at higher excitation intensities the responsivity is reduced, exhibiting a strong spectral dependence. Thereby, our results show that the grown multilayer In0.4Ga0.6As/GaAs QD heterostructure is of relevant interest for application in lateral QD photodetectors.
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10 Природничі науки::104 Фізика та астрономія
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Фізика конденсованих систем
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