Тези конференцій | Conference papers

Samples ofporous silicon (PS) were etched in concentrated hydrofluonc acid. The initial and etched samples were exposed to the air by pairs at room temperature either in the dark or in daylight. In the process of exposition the integrated intensity of photoluminescence (IPL) excited by a nitrogen laser (337 nm) was measured in regular time intervals on all samples. It has been established that when samples are exposed to the light their 'PL rises with lime, increasing more rapidly in the etched samples than in the nonetched ones. 'PL of the etched samples flattened out after several weeks, while that of the nonetched ones — after several months. 'PL ofthe samples that were in the dark practically did not change with time. It is shown that the rate of 'PL nse depends on a degree of ionization of the air where the samples were located. The results obtained confirm the idea that one ofthe main factors limiting the quantum yield of PS photolurninescence is the nonradiative recombmation that results from the presence ofdangling bonds which may be saturated by the light-generated air ions.

Photoluminescence and optical properties of the surface functional layer of detector-grade Cl-compensated semiconductor CdTe(111) single crystals modified by chemical etching and nanosecond laser processing have been studied. A bromine-methanol solution was used for polishing etching and nanosecond pulses of the second harmonic of YAG:Nd laser was applied as a radiation source. The photoluminescence spectra were excited at 80 K by an argon-ion laser with wavelength of 488 nm. The intrinsic emission band at 1.56 eV and broad defect band peaked at 1.45 eV were observed in the spectra before and after chemical and laser processing of CdTe crystals. The emission between 1.4-1.5 eV was associated with carrier recombination at defects in the surface region, so called the band of surface states. The optical parameters were determined using an ellipsometer with laser wavelength of 632.8 nm. Refraction n and absorption k indices were calculated within model of a homogeneous absorbing surface layer upon an absorbing substrate. An increase in n and k was observed at laser irradiation with energy density near or higher than the CdTe melting threshold that was attributed to an increase in volume fraction of Te in the surface region of the crystal. A decrease in the emission intensity at 1.45 eV was evidence of a reduction of the surface impurity contribution to the spectrum as a result of chemical etching. A rise of this band after irradiation was due of formation of point defects and dislocations in a surface layer of the crystal.